SI4812BDY-T1-GE3
Description
MOSFET N-CH 30V 7.3A 8SO
Detailed Description
N-Channel 30 V 7.3A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
Delivery Cycle
No lead time information available
Product Attributes
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
1.4W (Ta)
Current - Continuous Drain (Id) @ 25°C
7.3A (Ta)
Vgs (Max)
±20V
Supplier Device Package
8-SOIC
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Rds On (Max) @ Id, Vgs
16mOhm @ 9.5A, 10V
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
FET Feature
-
Vgs(th) (Max) @ Id
3V @ 250µA
Technology
MOSFET (Metal Oxide)
Packaging
Cut Tape (CT)
Documents & Media
Datasheets：SI4812BDY
PCN Obsolescence/ EOL：Mult Mosfet EOL 30/Aug/2018
HTML Datasheet：SI4812BDY