SI2312CDS-T1-GE3
Description
MOSFET N-CH 20V 6A SOT23-3
Detailed Description
N-Channel 20 V 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
Delivery Cycle
11 week(s)
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Product Attributes
Supplier Device Package
SOT-23-3 (TO-236)
FET Feature
-
Packaging
Cut Tape (CT)
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
31.8mOhm @ 5A, 4.5V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Package / Case
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
865 pF @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Vgs (Max)
±8V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Power Dissipation (Max)
1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id
1V @ 250µA
Documents & Media
Datasheets：SI2312CDS
Environmental Information：Material Compliance
Environmental Information：Vishay Aluminum Capacitor and Energy Storage REACH
PCN Assembly/Origin：New Solder Plating Site 18/Apr/2023
HTML Datasheet：SI2312CDS