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PSMN2R5-60PLQ
Classify
Transistors
Manufacturer
Nexperia USA Inc.
Description
MOSFET N-CH 60V 150A TO220AB
Detailed Description
N-Channel 60 V 150A (Tc) 349W (Tc) Through Hole TO-220AB
Delivery Cycle
6 week(s)
Product Attributes
Package / Case
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
223 nC @ 10 V
FET Feature
-
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
150A (Tc)
Power Dissipation (Max)
349W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Packaging
Tube
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Mounting Type
Through Hole
Rds On (Max) @ Id, Vgs
2.6mOhm @ 25A, 10V
FET Type
N-Channel
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60 V
Documents & Media
Datasheets:PSMN2R5-60PL
PCN Packaging:All Dev Label Chgs 2/Aug/2020
PCN Packaging:Label Chg 12/Mar/2017
HTML Datasheet:PSMN2R5-60PL