NTMFS4C35NT1G
Description
MOSFET N-CH 30V 12.4A 5DFN
Detailed Description
N-Channel 30 V 12.4A (Ta) 780mW (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Delivery Cycle
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Product Attributes
Packaging
Tape & Reel (TR)
Package / Case
8-PowerTDFN, 5 Leads
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Input Capacitance (Ciss) (Max) @ Vds
2300 pF @ 15 V
Vgs(th) (Max) @ Id
2.2V @ 250µA
FET Type
N-Channel
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
12.4A (Ta)
Power Dissipation (Max)
780mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs
3.2mOhm @ 30A, 10V
Mounting Type
Surface Mount
Documents & Media
Datasheets：NTMFS4C35N
Environmental Information：Material Declaration NTMFS4C35NT1G
Environmental Information：onsemi REACH
Environmental Information：onsemi RoHS
PCN Obsolescence/ EOL：Mult Dev EOL 08/Jul/2021
PCN Design/Specification：Enlarged Clip Implementation 15/Jan/2015
PCN Assembly/Origin：Wafer Fab Site Addition 18/Jun/2015
HTML Datasheet：NTMFS4C35N
EDA Models：NTMFS4C35NT1G by Ultra Librarian