NTD4913N-1G
Description
MOSFET N-CH 30V 7.7A/32A IPAK
Detailed Description
N-Channel 30 V 7.7A (Ta), 32A (Tc) 1.36W (Ta), 24W (Tc) Through Hole I-PAK
Delivery Cycle
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Product Attributes
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1013 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
7.7A (Ta), 32A (Tc)
Packaging
Tube
FET Type
N-Channel
Power Dissipation (Max)
1.36W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id
2.2V @ 250µA
Drain to Source Voltage (Vdss)
30 V
Technology
MOSFET (Metal Oxide)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Rds On (Max) @ Id, Vgs
10.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Vgs (Max)
±20V
Documents & Media
HTML Datasheet：NTD4913N
PCN Obsolescence/ EOL：Multiple Devices 05/Oct/2010
Environmental Information：onsemi RoHS
Datasheets：NTD4913N