DKI04103
Description
MOSFET N-CH 40V 29A TO252
Detailed Description
N-Channel 40 V 29A (Tc) 32W (Tc) Surface Mount TO-252
Delivery Cycle
No lead time information available
Product Attributes
Rds On (Max) @ Id, Vgs
11.5mOhm @ 18.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds
990 pF @ 25 V
Power Dissipation (Max)
32W (Tc)
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging
Cut Tape (CT)
Vgs (Max)
±20V
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Supplier Device Package
TO-252
Operating Temperature
150°C (TJ)
Drain to Source Voltage (Vdss)
40 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Documents & Media
Datasheets：DKI04103
PCN Obsolescence/ EOL：Mult Dev EOL 18/Jun/2021